Semiconductor Electronics: Materials, Devices and Simple Circuits
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In an n-type silicon, which of the following statement is true:
(a)    Electrons are majority carriers and trivalent atoms are the dopants.
(b)    Electrons are minority carriers and pentavalent atoms are the dopants.
(c)    Holes are minority carriers and pentavalent atoms are the dopants.
(d)    Holes are majority carriers and trivalent atoms are the dopants.

N-type semiconductor is obtained by doping the Ge or Si with pentavalent atoms and also, electrons are majority carriers and holes are minority carriers.

Hence answer (c) is true.
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    Carbon, silicon and germanium have four valence electrons each. These are characterised by valence and conduction bands separated by energy band gap respectively equal to (Eg)C, (Eg)Si and (Eg)Ge. Which of the following statements is true?
    (a)    (Eg)Si < (Eg)Ge < (Eg)C
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    (c)    (Eg)C > (Eg)Si > (Eg)Ge
    (d)  (Eg)C = (Eg)Si = (Eg)Ge
    Answer
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    (b)    they move across the junction by the potential difference.
    (c)    hole concentration in p-region is more as compared to n-region.
    (d)    all the above.
    Answer
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    A.

    Raises the potential barrier.

    B.

    Reduces the majority carrier current to zero.

    C.

    Lowers the potential barrier.

    D.

    None of the above.
    Answer
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    Answer
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