Semiconductor Electronics: Materials, Devices and Simple Circuits
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Which of the statements given in Question 14.1 is true for p-type semiconductors.

In p-type semiconductor holes are majority carriers and electrons are minority carriers and p-type semiconductor is obtained by doping Ge or Si with trivalent atoms.  

Hence (d) is correct.
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    Carbon, silicon and germanium have four valence electrons each. These are characterised by valence and conduction bands separated by energy band gap respectively equal to (Eg)C, (Eg)Si and (Eg)Ge. Which of the following statements is true?
    (a)    (Eg)Si < (Eg)Ge < (Eg)C
    (b)    (Eg)C < (Eg)Ge > (Eg)Si
    (c)    (Eg)C > (Eg)Si > (Eg)Ge
    (d)  (Eg)C = (Eg)Si = (Eg)Ge
    Answer

    In an n-type silicon, which of the following statement is true:
    (a)    Electrons are majority carriers and trivalent atoms are the dopants.
    (b)    Electrons are minority carriers and pentavalent atoms are the dopants.
    (c)    Holes are minority carriers and pentavalent atoms are the dopants.
    (d)    Holes are majority carriers and trivalent atoms are the dopants.

    Answer
    State True or False:

    When a forward bias is applied to a p-n junction, it

    A.

    Raises the potential barrier.

    B.

    Reduces the majority carrier current to zero.

    C.

    Lowers the potential barrier.

    D.

    None of the above.
    Answer
    In an unbiased p-n junction, holes diffuse from the p-region to n-region because
    (a)    free electrons in the n-region attract them.
    (b)    they move across the junction by the potential difference.
    (c)    hole concentration in p-region is more as compared to n-region.
    (d)    all the above.
    Answer
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