When a p-n diode is reverse biased,then
no current flows
the depletion region is increased
the depletion region is reduced
the height of the potential barrier is reduced
A light emitting diode (LED) has a voltage drop of 2 volt across it and passes a current of 10 mA when it operates with a 6 volt battery through a limiting resistor R. The value of R is
40 kΩ
4 kΩ
200 kΩ
400 kΩ
The minimum potential difference between the base and emitter required to switched a silicon transistor ON is approximately
1 V
3 V
5 V
4.2 V
Assertion: In common base configuration, the current gain of the transistor is less than unity.
Reason: The collector terminal is reverse biased for amplification.
If both assertion and reason are true and reason is the correct explanation of the assertion
If both assertion and reason are true but reason is not the correct explanation of the assertion
If assertion is true, but reason is false
Both assertion and reason are false statements
Assertion: A p-n junction with reverse bias can be used as a photo-diode to measure light intensity.
Reason: In a reverse bias condition the current is small but is more sensitive to changes in incident light intensity.
If both assertion and reason are true and reason is the correct explanation of the assertion
If both assertion and reason are true but reason is not the correct explanation ofthe assertion
If assertion is true, but reason is false
Both assertion and reason are false statements
Consider an n-p-n transistor amplifier in the common emitter configuration. The current gain of the transistor is 100. If the collector current changes by 1 mA, what will be the change in emitter current?
1.1 mA
1.01 mA
0.01 mA
10 mA
In a semiconductor material the mobilities of electrons and holes are μe and μn respectively. Which of the following is true?
μe > μn
μe < μn
μe = μn
μe< 0 ; μn > 0