When LED is forward biased, then
electrons from the n-type material cross the p-n junction and recombine with holes in the p-type material
electrons and holes neutralise each other
at junction electrons and holes neutralize each other
None of the above
The electrical conductivity of semiconductor increases, when electromagnetic radiation of a wavelength shorter than 24800 Å is incident on it. The bandgap for the semiconductor is
0.9 eV
0.7 eV
0.5 eV
1.1 eV
In a transistor, the collector current is always less than the emitter current because
collector side is reverse biased and the emitter side is forward biased
a few electrons are lost in the base and only remaining ones reach the collector
collector being reverse biased attracts less electron
collector side is forward biased and emitter side is reverse biased
To a germanium crystal, an equal number of aluminium and indium atoms are added. Then
it remains an intrinsic semiconductor
it becomes a n-type semiconductor
it becomes a p-type semiconductor
it becomes an insulator
In a reverse-biased diode when the applied voltage changes by 1 V, the current is found to change by 0.5 µA. The reverse bias resistance of the diode is
2 × 105 Ω
2 × 106 Ω
200 Ω
2 Ω
Forward bias characteristics of a p-n junction diode are used in which of the following devices?
Transistor
Tank circuit
Rectifier
All of these
The energy gap between the conduction band and valence band is of the order of 0.07 eV. It is a/an
insulator
conductor
semiconductor
alloy
A triode valve has an amplification factor of 20 and its plate is given a potential of 300 V. The grid voltage to reduce the plate current to zero, is
25 V
12 V
10 V