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 Multiple Choice QuestionsMultiple Choice Questions

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311.

A p-n-p transistor is used in common-emitter mode in an amplifier circuit. A change of 45 µA in the base current brings a change of 3 mA in collector current and 0.05 V in base-emitter voltage. If a load of 7 kΩ is used, then voltage gain of amplifier is

  • 729.25

  • 824.41

  • 236.34

  • 424.27


312.

A Zener diode, having breakdown voltage equal to 15 V, is used in a voltage regulator circuit shown in figure. The current through the diode is

   

  • 5 mA 

  • 10 mA 

  • 15 mA

  • 20 mA


313.

In the following circuit, the output Y becomes one for the inputs

  • A= 0, B = 1, C = 0

  • A = 1, B = 1, C = 0

  • A =1, B= 1, C = 1

  • A = 1, B= 0, C = 1


314.

Carbon, silicon and germanium atoms have four valence electrons each. Their valence and conduction bands are separated by energy band gaps represented by (Eg)C , (Eg )Si , and (Eg)Ge  respectively. Which one of the following relationships is true in their case ?

  • (Eg)C > (Eg)Si

  • (Eg)C = (Eg)Si

  • (Eg)C < (Eg)Ge

  • (Eg)C < (Eg)Si


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315.

Then n-type semiconductors are obtained, when germanium is doped with

  • arsenic

  • phosphorus

  • antimony

  • any one of these


316.

Which logic gate is represented by the following combination of logic gates ?

  • OR

  • NOR

  • AND

  • NAND


317.

The depletion layer of a p-n junction

  • is of constant width irrespective of the bias

  • acts like an insulating zone under reverse bias

  • has a width that increases with an increase in forward bias

  • is depleted of ions


318.

A Si and a Ge diode has identical physical dimensions. The band gap in Si is larger than that in Ge. An identical reverse bias is applied across the diodes

  • The reverse current in Ge is larger than that in Si

  • The reverse current in Si is larger than that in Ge

  • The reverse current is identical in the two diodes

  • The relative magnitude of the reverse currents cannot be determined from the given data only


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319.

A junction diode has a resistance of 25 Ω when forward biased and 2500 Ω when reverse biased. The current in the diode, for the arrangement shown will be

  • 115 A

  • 17 A

  • 125 A

  • 1180A


320.

In a common emitter configuration, a transistor has β = 50 and input resistance 1 kΩ. If the peak value of AC input is 0.01 V, then the peak value of collector current is

  • 0.01 µA

  • 0.25 µA

  • 100 µA

  • 500 µA


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