CBSE
Multiple Choice QuestionsA p-n-p transistor is connected in a common emitter configuration in a given amplifier. A load resistance of 800 ohm is connected in the collector circuit and the voltage drop across it is 0.8 V. If the current amplification factor is 0.96 and the input resistance of the circuit is 192 ohm, the voltage gain and the power gain of the amplifier will respectively be,
3.69,3.84
4,4
4,3.69
4,3.69
The figure shows a logic circuit with two inputs A and B and the output C. The voltage waveforms across A, B and C are as given. The logic circuit gate is
OR Gate
NOR Gate
AND Gate
AND Gate
To get an output Y = 1 in given circuit which of the following input will be correct
|
A |
B |
C |
|
1 |
0 |
0 |
|
A |
B |
C |
|
1 |
0 |
1 |
|
A |
B |
C |
|
1 |
1 |
0 |
|
A |
B |
C |
|
1 |
1 |
0 |
Which logic gate is represented by this following combination of logic gates?
OR
NAND
AND
AND
In a CE transistor amplifier, the audio signal voltage across the collector resistance of 2kΩ is 2V. If the base resistance is 1kΩ and the current amplification of the transistor is 100, the input signal voltage is
0.1 V
1.0 V
1 mV
1 mV
To get output for the following circuit, the correct choice for the input is,
A=1, B=0, C = 0
A=1, B=1, C = 0
A=1, B=0, C=1
A=1, B=0, C=1
Consider the junction diode as ideal. The value of current flowing through AB is,
10-2 A
10-1 A
10-3 A
10-3 A
The Input resistance of silicon transistor 100Ω. Base current is changed by 40 uA which results in a change in collector current by 2 mA. This transistor is used as common-emitter amplifier with a load resistance of 4 kΩ. The voltage gain of the amplifier is
2000
3000
4000
4000
If in a p-n junction, a square input signal of 10 V is applied as shown,
then the output across RL will be
C and si both have a same lattice structure, having 4 bonding electrons in each. However, C is insulator whereas Si is an intrinsic semiconductor. This is because
in the case of C, the valence band is not completely filled at absolute zero temperature
in a case C, the conduction band is partly filled even at absolute zero temperature
the four bonding electrons in the case of C lie in the second orbit, whereas in case of Si they lie in the third
the four bonding electrons in the case of C lie in the second orbit, whereas in case of Si they lie in the third
