Subject

Physics

Class

NEET Class 12

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 Multiple Choice QuestionsMultiple Choice Questions

41.

Hydrogen atom in ground state is excited by a monochromatic radiation of straight lambda space equals space 975 space straight A with straight o on top. The number of spectral lines in the resulting spectrum emitted will be,

  • 3

  • 2

  • 6

  • 6

2814 Views

42.

The binding energy per nucleon of Li presubscript 3 presuperscript 7 space and space He presubscript 2 presuperscript 4 nuclei are 5.60 MeV and 7.06 MeV, respectively. In the nuclear reaction, Li presubscript 3 presuperscript 7 space plus space straight H presubscript 1 presuperscript 1 space rightwards arrow space He presubscript 2 presuperscript 4 space plus space straight Q, the value of energy Q released is,

  • 19.6 MeV

  • -2.4 MeV

  • 8.4 MeV

  • 8.4 MeV

1253 Views

43.

A radio isotope X with a half life 1.4 x 109 yr decays of Y which is stable. A sample of the rock from a cave was found to contain X and Y in the ratio 1:7. The age of the rock is,

  • 1.96 x 109 yr

  • 3.92 x 109 yr

  • 4.20 x 109 yr

  • 4.20 x 109 yr

1309 Views

44.

The given graph represents V-I characteristic for a semiconductor device. Which of the following statement is correct?

  • It is V-I characteristic for solar cell where point A represents open circuit voltage and point B short circuit current.

  • It is for a solar cell and points A and B represent open circuit voltage and current, respectively.

  • It is for a photodiode and points A and B represent open circuit voltage and current, respectively.

  • It is for a photodiode and points A and B represent open circuit voltage and current, respectively.

824 Views

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45.

The barrier potential of a p-n junction diode depends on:
i) type of semiconductor material
ii) amount of doping
iii) temperature

Which one of the following is correct?

  • (i) and (ii) only

  • (ii) only

  • (ii) and (iii) only

  • (ii) and (iii) only


D.

(ii) and (iii) only

Barrier potential depends on the material used to make p-n junction diode (whether it is Si or Ge).

It should also depend on the amount of doping due to which the number of majority charge carriers will change. Also, it depends on temperature due to which the number of minority carriers will change.

772 Views

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