(i) In this case, the p-side is at -10 V, whereas the n-side is at 0 V. Vp < VN, hence, the diode is reverse biased.
(ii) In this case, the p-side is at 0 V, whereas the n-side is at -10 V. Vp > VN, hence, the diode is forward biased.
When applied voltage is such that n-side is negative and p-side is positive, the applied voltage is opposite to the barrier potential. Hence, the effective barrier potential becomes VB-V, and the energy barrier across the junction decreases. Thus, the junction width decreases.
(i) p-n junction is forward biased.
(ii) p-n junction is reverse biased.