Important Questions of Semiconductor Electronics: Materials, Devices and Simple Circuits Physics | Zigya

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171.

A p-n photodiode is made of a material with a band gap of 2.0 eV. The minimum frequency of the radiation that can be absorbed by the material is nearly

  • 10 x 1014 Hz

  • 5 x 1014 Hz

  • 1 x 1014 Hz

  • 1 x 1014 Hz

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172.

The Circuit is equivalent to 


  • AND gate

  • NAND gate

  • NOR gate

  • NOR gate

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173.

In the following circuit the output Y for all possible input A and B is expressed by the truth table:

  • A B Y
    0 0 0
    0 1 0
    1 0 0
    1 1 1
  • A B Y
    0 0 1
    0 1 1
    1 0 1
    1 1 0
  • A B Y
    0 0 1
    0 1 1
    1 0 1
    1 1 0
  • A B Y
    0 0 1
    0 1 1
    1 0 1
    1 1 0
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174.

In the energy band diagram of a material shown below, the open circles and filled circles denote holes and electrons respectively. The material is a/an,

  • p-type semiconductor

  • insulator

  • metal

  • metal

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175.

A transistor is operated in common emitter configuration at constant collector voltage Vc = 1.5 V such that a change in the base current from 100 µA to 150 µA produces a change in the collector current from 5 mA to 10 mA. The current gain (β) is

  • 67

  • 75

  • 100

  • 100

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176.

A forward biased diode is

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177.

The following figure shows a logic gate circuit with two inputs A and B and the output C. The voltage waveforms of A, B and C are as shown below:

The logic curcuit gate is

  • AND gate

  • NAND gate

  • NOR gate

  • NOR gate

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178.

In a common emitter transistor amplifier, the audio signal voltage across the collector is 3 V. The resistance of collector is 3 kΩ. If current gain is 100 and the base resistance is 2 kΩ, the voltage and power gain of the amplifier is

  • 200 and 1000

  • 15 and 200

  • 150 and 15000

  • 150 and 15000

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179.

Which one of the following represents forward bias diode?

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180.

The given electrical network is equivalent to

  • AND gate

  • NOR gate

  • OR gate

  • OR gate

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